BD277

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD277 DESCRIPTION ·Wide Area of Safe Operation ·Low Saturation Voltage·High Power Dissipation APPLICATIONS ·Designed for use in series regulators and shunt regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -45 -45 -4 -7 -3 70 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.78 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD277 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ;IB= 0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.75A; IB= -0.1A -0.5 V VBE(on) Base-Emitter On Voltage IC= -1.75A ; VCE= -2V -1.2 V VCB= -45V; IE= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -0.1 mA -2.0 ICEO Collector Cutoff Current VCE= -30V; IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 mA hFE DC Current Gain IC= -1.75A; VCE= -2V 30 150 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 10 MHz isc Website：www.iscsemi.cn 2