BD302

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD302 DESCRIPTION ·DC Current Gain : hFE = 30(Min.)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -45V(Min.) ·Complement to Type BD301 APPLICATIONS ·Designed for audio output stages up to 25W, vertical deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -60 -45 -5 -8 -12 -2 55 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.3 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD302 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA; IB= 0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -1.0 mA ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE DC Current Gain IC= -3A; VCE= -2V 30 fT Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V 3 MHz isc Website：www.iscsemi.cn 2