BD312

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD312 DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD311 APPLICATIONS ・Designed for power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -10 -20 -4 115 -65~200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.52 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ; IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A IC=-5A ;VCE=-4V VCB=rated;IE=0 VEB=-7V; IC=0 IC=-5A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V,f=1MHz 25 5 4 MIN -60 TYP. BD312 MAX UNIT V -1.0 -1.8 -1.5 -1.0 -1.0 V V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD312 Fig.2 Outline dimensions 3