BD315

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD315 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 8A ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.0 V(Max)@ IC = 8A ·Complement to Type BD316 APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 80 80 7 16 20 5 200 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD315 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA; IB=0 B 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 1.8 V VBE(on) ICBO Base-Emitter On Voltage IC= 8A; VCE= 2V 1.5 V Collector Cutoff Current VCB= 80V; IB=0 B 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 8A; VCE= 4V 25 hFE-2 DC Current Gain IC= 10A; VCE= 4V 15 fT Current Gain-Bandwidth Product IC= 1A; VCE= 20V 1 MHz isc Website：www.iscsemi.cn 2