BD316

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD316 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = -8A ·Collector-Emitter Saturation Voltage: VCE(sat)= -1.0 V(Max)@ IC = -8A ·Complement to Type BD315 APPLICATIONS ·Designed for high quality amplifiers operating up to 100 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -80 -80 -7 -16 -20 -5 200 200 -65~200 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD316 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-200mA; IB=0 B -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -8A; IB= -0.8A B -1.8 V VBE(on) ICBO Base-Emitter On Voltage IC= -8A; VCE= -2V -1.5 V Collector Cutoff Current VCB= -80V; IB= 0 B -1.0 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -8A; VCE= -4V 25 hFE-2 DC Current Gain IC= -10A; VCE= -4V 15 fT Current Gain-Bandwidth Product IC= -1A; VCE= -20V 1 MHz isc Website：www.iscsemi.cn 2