BD317

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD317 DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD318 APPLICATIONS ・Designed for high power amplifiers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 16 20 5 200 -65~200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat VBE(on) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=8A ;IB=0.8A IC=8A ;IB=0.8A IC=8A ;VCE=2.0V VCB=100V;IE=0 VEB=7V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=20V,f=0.5MHz 25 15 1.0 MIN 100 TYP. BD317 MAX UNIT V 1.0 1.8 1.5 1.0 1.0 V V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD317 Fig.2 Outline dimensions 3