BD318

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD318 DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD317 APPLICATIONS ・Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector 1 2 3 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -16 -20 -5 200 -65~200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD318 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0 -100 V VCEsat VBEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A IC=-8A ;IB=-0.8A -1.0 V Base-emitter saturation voltage -1.8 V VBE(on) ICBO Base-emitter on voltage IC=-8A ;VCE=-2.0V -1.5 V Collector cut-off current VCB=100V;IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 25 hFE-2 fT DC current gain IC=-10A ; VCE=-4V IC=-1A ; VCE=-20V,f=0.2MHz 15 Transition frequency 1 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD318 Fig.2 Outline dimensions 3