BD329

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD329 DESCRIPTION ·DC Current Gain: hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 20V(Min) ·Complement to type BD330 APPLICATIONS ·Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 32 20 5 3 1 15 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 7 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD329 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.5 V VBE(on)-1 Base-Emitter On Voltage IC= 5mA; VCE= 10V 0.6 V VBE(on)-2 ICBO Base-Emitter On Voltage IC= 2A; VCE= 1V VCB= 32V; IE= 0 VCB= 32V; IE= 0,TC=150℃ VEB= 5V; IC= 0 1.2 0.1 10 0.1 V μA μA Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain IC= 5mA; VCE= 10V 50 hFE-2 DC Current Gain IC= 0.5A; VCE= 1V 85 375 hFE-3 DC Current Gain IC= 2A; VCE= 1V 40 fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 5V; ftest= 100MHz 130 MHz isc Website：www.iscsemi.cn 2