BD330

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD330 DESCRIPTION ·DC Current Gain: hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= -20V(Min) ·Complement to type BD329 APPLICATIONS ·Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -32 -20 -5 -3 -1 15 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 7 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD330 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.5 V VBE(on)-1 Base-Emitter On Voltage IC= -5mA; VCE= -10V -0.6 V VBE(on)-2 ICBO Base-Emitter On Voltage IC= -2A; VCE= -1V VCB= -32V; IE= 0 VCB= -32V; IE= 0,TC=150℃ VEB= -5V; IC= 0 -1.2 -0.1 -10 -0.1 V μA μA Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain IC= -5mA; VCE= -10V 50 hFE-2 DC Current Gain IC= -0.5A; VCE= -1V 85 375 hFE-3 DC Current Gain IC= -2A; VCE= -1V 40 fT Current-Gain—Bandwidth Product IC= -50mA;VCE= -5V; ftest= 100MHz 100 MHz isc Website：www.iscsemi.cn 2