BD376

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD376 VCBO Collector-Base Voltage BD378 BD380 BD376 VCEO Collector-Emitter Voltage BD378 BD380 VEBO IC ICM IB B VALUE -50 -75 -100 -45 -60 -80 -5 -2 -3 -1 25 150 -55~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD376 VCEO(SUS) Collector-Emitter Sustaining Voltage BD378 BD380 BD376 VCBO Collector-Base Voltage BD378 BD380 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD376 ICBO Collector Cutoff Current BD378 BD380 IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= -1A; IB= -0.1A B BD376/378/380 CONDITIONS MIN -45 TYP. MAX UNIT IC= -100mA ; IB= 0 -60 -80 -50 V IC= -0.1mA ; IE= 0 -75 -100 -1.0 -1.5 -2 -2 -2 -0.1 40 20 375 V V V IC= -1A; VCE= -2V VCB= -45V; IE= 0 VCB= -60V; IE= 0 VCB= -80V; IE= 0 VEB= -5V; IC= 0 IC= -0.15A ; VCE= -2V IC= -1A; VCE= -2V μA mA Switching Times ton toff Turn-On Time Turn-Off Time 0.05 0.5 μs μs IC= -0.5A; IB1= -IB2= -50mA; VCC= -30V hFE-1 Classifications 6 40-100 10 63-160 16 100-250 25 150-375 isc Website：www.iscsemi.cn 2