BD379

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD375/377/379 DESCRIPTION ·DC Current Gain: hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD375 VCBO Collector-Base Voltage BD377 BD379 BD375 VCEO Collector-Emitter Voltage BD377 BD379 VEBO IC ICM IB B VALUE 50 75 100 45 60 80 5 2 3 1 25 150 -55~150 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD375 VCEO(SUS) Collector-Emitter Sustaining Voltage BD377 BD379 BD375 VCBO Collector-Base Voltage BD377 BD379 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD375 ICBO Collector Cutoff Current BD377 BD379 IEBO hFE-1 hFE-2 Emitter Cutoff Current DC Current Gain DC Current Gain IC= 1A; IB= 0.1A B BD375/377/379 CONDITIONS MIN 45 TYP. MAX UNIT IC= 100mA ; IB= 0 60 80 50 V IC= 0.1mA ; IE= 0 75 100 1.0 1.5 2 2 2 0.1 40 20 375 V V V IC= 1A; VCE= 2V VCB= 45V; IE= 0 VCB= 60V; IE= 0 VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.15A ; VCE= 2V IC= 1A; VCE= 2V μA mA Switching Times ton toff Turn-On Time Turn-Off Time 0.05 0.5 μs μs IC= 0.5A; IB1= -IB2= 50mA; VCC= 30V hFE-1 Classifications 6 40-100 10 63-160 16 100-250 25 150-375 isc Website：www.iscsemi.cn 2