BD434

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD434 VCBO Collector-base voltage BD436 BD438 BD434 VCEO Collector-emitter voltage BD436 BD438 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -22 -32 -45 -22 -32 -45 -5 -4 -7 -1 36 150 -65~150 V A A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter saturation voltage BD434/436 IC=-2A; IB=-0.2A BD438 BD434/436 VBE Base-emitter on voltage BD438 BD434 VCEO(SUS) Collector-emitter sustaining voltage BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 BD434 ICES Collector cut-off current BD436 BD438 IEBO Emitter cut-off current BD434/436 hFE-1 DC current gain BD438 hFE-2 DC current gain BD434/436 hFE-3 DC current gain BD438 fT Transition frequency IC=-250mA; VCE=-1V IC=-2A ; VCE=-1V IC=-0.5A ; VCE=-1V IC=-10mA ; VCE=-5V VCB=-22V; IE=0 VCB=-32V; IE=0 VCB=-45V; IE=0 VCE=-22V; VBE=0 VCE=-32V; VBE=0 VCE=-45V; VBE=0 VEB=-5V; IC=0 IC=-0.1A; IB=0 IC=-2A ; VCE=-1V CONDITIONS BD434/436/438 MIN TYP. MAX -0.5 UNIT VCEsat -0.2 -0.6 -1.1 V V -1.2 -22 -32 -45 V -100 μA -100 μA -1 40 130 30 85 50 40 3 140 mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD434/436/438 Fig.2 Outline dimensions 3