BD435

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD433 VCBO Collector-base voltage BD435 BD437 BD433 VCEO Collector-emitter voltage BD435 BD437 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 22 32 45 22 32 45 5 4 7 1 36 150 -65~150 V A A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter saturation voltage BD433/435 IC=2A; IB=0.2A BD437 BD433/435 VBE Base-emitter on voltage BD437 BD433 VCEO(SUS) Collector-emitter sustaining voltage BD435 BD437 BD433 ICES Collector cut-off current BD435 BD437 BD433 ICES Collector cut-off current BD435 BD437 IEBO Emitter cut-off current BD433/435 hFE-1 DC current gain BD437 hFE-2 DC current gain BD433/435 hFE-3 DC current gain BD437 fT Transition frequency IC=250mA; VCE=1V IC=2A ; VCE=1V IC=0.5A ; VCE=1V IC=10mA ; VCE=5V VCB=22V; IE=0 VCB=32V; IE=0 VCB=45V; IE=0 VCE=22V; VBE=0 VCE=32V; VBE=0 VCE=45V; VBE=0 VEB=5V; IC=0 IC=0.1A; IB=0 IC=2A ; VCE=1V CONDITIONS BD433/435/437 MIN TYP. MAX 0.5 UNIT VCEsat 0.2 0.6 1.1 V V 1.2 22 32 45 V 100 μA 100 μA 1 40 130 30 85 50 40 3 140 mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD433/435/437 Fig.2 Outline dimensions 3