BD439

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD439 BD441 DESCRIPTION ・With TO-126 package ・Complement to type BD440,BD442 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD439 VCBO Collector-base voltage BD441 BD439 VCEO Collector-emitter voltage BD441 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 4 7 1 36 150 -65~150 V A A A W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE-1 VBE-2 PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD439 IC=0.1A; IB=0 BD441 BD439 ICBO Collector cut-off current BD441 BD439 ICES Collector cut-off current BD441 IEBO Emitter cut-off current BD439 hFE-1 DC current gain BD441 hFE-2 DC current gain BD439 hFE-3 DC current gain BD441 fT Transition frequency IC=250mA; VCE=1V IC=2A ; VCE=1V IC=0.5A ; VCE=1V IC=10mA ; VCE=5V VCE=80V; VBE=0 VEB=5V; IC=0 VCB=80V; IE=0 VCE=60V; VBE=0 VCB=60V; IE=0 CONDITIONS IC=2A; IB=0.2A IC=10mA ; VCE=5V IC=2A ; VCE=1V BD439 BD441 MIN TYP. MAX 0.8 UNIT V V 0.58 1.5 60 V VCEO(SUS) Collector-emitter sustaining voltage V 80 100 μA 100 μA 1 20 130 15 40 25 15 3 140 mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD439 BD441 Fig.2 Outline dimensions 3