BD440

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD440 BD442 DESCRIPTION ・With TO-126 package ・Complement to type BD439,BD441 APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD440 VCBO Collector-base voltage BD442 BD440 VCEO Collector-emitter voltage BD442 VEBO IC ICM IB PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE UNIT -60 V -80 -60 V -80 -5 -4 -7 -1 36 150 -65~150 V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE-1 VBE-2 PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD440 IC=-0.1A; IB=0 BD442 BD440 ICBO Collector cut-off current BD442 BD440 ICES Collector cut-off current BD442 IEBO Emitter cut-off current BD440 hFE-1 DC current gain BD442 hFE-2 DC current gain BD440 hFE-3 DC current gain BD442 fT Transition frequency IC=-250mA; VCE=-1V IC=-2A ; VCE=-1V IC=-0.5A ; VCE=-1V IC=-10mA ; VCE=-5V VCE=-80V; VBE=0 VEB=-5V; IC=0 VCB=-80V; IE=0 VCE=-60V; VBE=0 VCB=-60V; IE=0 CONDITIONS IC=-2A; IB=-0.2A IC=-10mA ; VCE=-5V IC=-2A ; VCE=-1V BD440 BD442 MIN TYP. MAX UNIT V V -0.8 -0.58 -1.5 -60 V VCEO(SUS) Collector-emitter sustaining voltage V -80 μA -100 -100 μA -1 20 130 15 40 25 15 3 140 mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD440 BD442 Fig.2 Outline dimensions 3