BD500B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD500/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) -80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD500 VCBO Collector-Base Voltage BD500B BD500 VCEO Collector-Emitter Voltage BD500B VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range -80 -5 -10 75 150 -55~150 V A W ℃ ℃ -85 -50 V VALUE -55 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.39 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD500/B TYP. MAX UNIT BD500 VCEO(SUS) Collector-Emitter Sustaining Voltage BD500B IC= -30mA ;IB= 0 B -50 V -80 BD500 VCE(sat) Collector-Emitter Saturation Voltage BD500B IC= -5A; IB= -0.5A B -1.0 IC= -3.5A; IB= -0.35A B V BD500 VBE(on) Base-Emitter On Voltage BD500B IC= -5A; VCE= -4V -1.6 IC= -3.5A; VCE= -4V V VCB= -55V;IE= 0 ICBO Collector Cutoff Current VCB= -85V;IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA BD500 hFE DC Current Gain BD500B IC= -5A; VCE= -4V 15 IC= -3.5A; VCE= -4V 90 fT Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V 8 MHz isc Website：www.iscsemi.cn 2