BD533

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 DESCRIPTION ・With TO-220C package ・Complement to type BD534/536/538 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD533 VCBO Collector-base voltage BD535 BD537 BD533 VCEO Collector-emitter voltage BD535 BD537 VEBO IC IE IB PC Tj Tstg Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 8 8 1 50 150 -65~150 V A A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat-1 VCEsat-2 VBE PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD533 ICBO Collector cut-off current BD535 BD537 BD533 ICES Collector cut-off current BD535 BD537 IEBO Emitter cut-off current BD533/535 hFE-1 DC current gain BD537 hFE-2 DC current gain DC current gain (All device) Group: J IC=2A ; VCE=2V Group: K Group: J IC=3A ; VCE=2V Group: K IC=0.5A ; VCE=1V 20 3 12 MHz 40 15 100 IC=0.5A ; VCE=2V IC=10mA ; VCE=5V 15 40 30 75 CONDITIONS IC=2 A;IB=0.2 A IC=6 A;IB=0.6 A IC=2A ; VCE=2V VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 VEB=5V; IC=0 20 1 mA 0.1 mA 0.1 mA 0.8 1.5 MIN TYP. MAX 0.8 UNIT V V V hFE-3 hFE-4 DC current gain (All device) Transition frequency fT 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD533/535/537 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3