BD538

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 DESCRIPTION ・With TO-220C package ・Complement to type BD533/535/537 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD534 VCBO Collector-base voltage BD536 BD538 BD534 VCEO Collector-emitter voltage BD536 BD538 VEBO IC IE IB PC Tj Tstg Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitterCONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -8 -8 -1 50 150 -65~150 V A A A W ℃ ℃ V V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD534/536/538 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat-1 VCEsat-2 VBE PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD534 ICBO Collector cut-off current BD536 BD538 BD534 ICES Collector cut-off current BD536 BD538 IEBO Emitter cut-off current BD534/536 hFE-1 DC current gain BD538 hFE-2 DC current gain DC current gain (All device) Group: J IC=-2A ; VCE=-2V Group: K Group: J IC=-3A ; VCE=-2V Group: K IC=-0.5A ; VCE=-1V 20 3 12 MHz 40 15 100 IC=-0.5A ; VCE=-2V IC=-10mA ; VCE=-5V 15 40 30 75 CONDITIONS IC=-2 A;IB=-0.2 A IC=-6 A;IB=-0.6 A IC=-2A ; VCE=-2V VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-80V; IE=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 VCE=-80V; VBE=0 VEB=5V; IC=0 20 -1 mA -0.1 mA -0.1 mA -0.8 -1.5 MIN TYP. MAX -0.8 UNIT V V V hFE-3 hFE-4 DC current gain (All device) Transition frequency fT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD534/536/538 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3