BD539B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD539B DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Complement to Type BD540B APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 80 80 5 5 2 W 45 150 -65~150 ℃ ℃ UNIT V V V A PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.78 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD539B MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.25 V ICEO Collector Cutoff Current VCB= 60V; IB= 0 B 0.3 mA ICES Collector Cutoff Current VCE= 80V; VBE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A; VCE= 4V 30 hFE-3 DC Current Gain IC= 3A; VCE= 4V 12 isc Website：www.iscsemi.cn 2