BD540C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD540C DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type BD539C APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -100 -100 -5 -5 2 W 45 150 -65~150 ℃ ℃ UNIT V V V A PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.78 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD540C MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A B -0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V -1.25 V ICEO Collector Cutoff Current VCB= -60V; IB= 0 B -0.3 mA ICES Collector Cutoff Current VCE= -100V; VBE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A; VCE= -4V 30 hFE-3 DC Current Gain IC= -3A; VCE= -4V 12 isc Website：www.iscsemi.cn 2