BD543C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD543/A/B/C DESCRIPTION ・With TO-220C package ・Complement to type BD544/A/B/C ・8 A continuous collector current ・10 A peak Collector current ・ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD543 BD543A VCBO Collector-base voltage BD543B BD543C BD543 BD543A VCEO Collector-emitter voltage BD543B BD543C VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 100 5 8 10 70 -65~150 -65~150 V A A W ℃ ℃ Open emitter 80 100 40 60 V CONDITIONS VALUE 40 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD543/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD543 Collector-emitter breakdown voltage BD543A IC=30mA ;IB=0 BD543B BD543C VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain BD543/543A BD543B/543C IC=3A ;IB=0.3A IC=5A ;IB=1A IC=8A ;IB=1.6A IC=5A ; VCE=4V VCE=30V;IB=0 0.7 VCE=60V;IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=5A ; VCE=4V 60 40 15 1 mA mA 80 100 0.5 0.5 1 1.6 V V V V CONDITIONS MIN 40 60 V TYP. MAX UNIT V(BR)CEO ICEO IEBO hFE-1 hFE-2 hFE-3 Switching times ton toff Turn-on time Turn-off time IC=6A; IB1=-IB2=0.6A RL=5Ω 0.6 1.0 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD543/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3