BD544C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·70 W at 25°C Case Temperature ·Complement to Type BD543/A/B/C ·8 A Continuous Collector Current APPLICATIONS ·Designed for high power audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD544 BD544A VCBO Collector-Base Voltage BD544B BD544C BD544 BD544A VCEO Collector-Emitter Voltage BD544B BD544C VEBO IC ICM Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ Junction Temperature Storage Temperature Range -80 -100 -5 -8 -10 70 W 2 150 -65~150 ℃ ℃ V A A -80 -100 -40 -60 V VALUE -40 -60 V UNIT BD544/A/B/C PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 4.17 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD544 BD544A IC= -30mA ; IB= 0 BD544B BD544C VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD544 BD544A BD544B BD544C BD544/A BD544B/C IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain IC= -3A; IB= -0.3A B BD544/A/B/C CONDITIONS MIN -40 -60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V -80 -100 -0.5 -0.5 -1.0 -1.4 -0.4 -0.4 mA -0.4 -0.4 -0.7 mA V V V V IC= -5A; IB= -1A B IC= -8A; IB= -1.6A B IC= -5A; VCE= -4V VCE= -40V; VBE= 0 VCE= -60V; VBE= 0 VCE= -80V; VBE= 0 VCE= -100V; VBE= 0 VCE= -30V; IB= 0 B ICES Collector Cutoff Current ICEO Collector Cutoff Current VCE= -60V; IB= 0 B VEB= -5V; IC= 0 IC= -1A ; VCE= -4V IC= -3A ; VCE= -4V IC= -5A ; VCE= -4V 60 40 15 -1 mA Switching Times ton toff Turn-On Time Turn-Off Time 0.4 0.7 μs μs IC= -6A; IB1= -IB2= -0.6A; VBE(off)= 4V, RL= 5Ω isc Website：www.iscsemi.cn 2