BD545B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 15A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C ·Complement to Type BD546/A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD545 BD545A VCBO Collector-Base Voltage BD545B BD545C BD545 Collector-Emitter Voltage BD545A BD545B BD545C VEBO IC Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 80 100 40 60 V 80 100 5 15 3.5 W 85 150 -65~150 ℃ ℃ V A VALUE 40 60 V UNIT BD545/A/B/C VCEO PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-c PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.47 35.7 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD545 BD545A IC= 30mA ;IB=0 B BD545/A/B/C CONDITIONS MIN 40 60 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage V 80 100 BD545B BD545C VCE(sat)-1 VCE(sat)-2 VBE(on) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage BD545 BD545A BD545B BD545C BD545/A BD545B/C IC= 5A; IB= 0.625A B 0.8 1.0 1.8 V V V IC= 10A; IB= 2A IC= 10A; VCE= 4V VCE= 40V; VBE= 0 VCE= 60V; VBE= 0 ICES Collector Cutoff Current 0.4 VCE= 80V; VBE= 0 VCE= 100V; VBE= 0 VCE= 30V; IB= 0 B mA ICEO Collector Cutoff Current 0.7 VCE= 60V; IB= 0 B mA IEBO hFE-1 hFE-2 hFE-3 Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain VEB= 5V; IC= 0 IC= 1A; VCE= 4V IC= 5A; VCE= 4V IC= 10A; VCE= 4V 60 25 10 1.0 mA Switching times ton toff Turn-on Time Turn-off Time 0.6 1.0 μs μs IC= 6A; IB1= -IB2= 0.6A; RL= 5Ω; VBE(off)= -4V isc Website：www.iscsemi.cn 2