BD550B

INCHANGE Semiconductor Product Specification isc Silicon NPN Power Transistors BD550B DESCRIPTION ·High Power Dissipation ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 110V(Min) APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCER VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range MAX 275 275 250 5 7 2 150 200 -65~200 UNIT V V V V A A W ℃ ℃ PC Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat) VBE(on) ICER ICEO IEBO hFE fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current Gain-Bandwidth Product CONDITIONS IC= 0.2A ; IB= 0 IC= 0.2A ; RBE= 100Ω IC= 2A; IB= 0.25A B BD550B MIN 250 275 TYP. MAX UNIT V V 2 2 1 5 1 10 5 50 V V mA mA mA IC= 2A ; VCE= 4V VCE= 250V; RBE= 100Ω VCE= 200V; IB= 0 VEB= 5V; IC= 0 IC= 2A ; VCE= 4V IC= 0.2A ; VCE= 10V MHz isc Website：www.iscsemi.cn