BD636

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD636 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) ·Complement to Type BD635 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE -60 -60 -5 -2 -5 -0.3 2 UNIT V V V A A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 30 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD636 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V -1.3 V ICES Collector Cutoff Current VCE= -60V; VBE= 0 -0.2 mA hFE-1 DC Current Gain IC= -25mA; VCE= -2V 40 hFE-2 DC Current Gain IC= -1A; VCE= -2V 25 isc Website：www.iscsemi.cn 2