BD651

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BD651 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652 APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 140 120 5 8 12 0.3 2 UNIT V V V A A A PC W 62.5 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 2 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD649 MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V VCE(sat)-1 VCE(sat)-2 VBE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2.0 V Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.5 V Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 3.0 V Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V VCB= 120V; IE= 0 ICBO Collector Cutoff Current VCB= 70V; IE= 0; TC= 150℃ 0.2 mA 2.0 ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE DC Current Gain IC= 3A ; VCE= 3V 750 isc Website：www.iscsemi.cn 2