BD678

Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type BD675/BD677/BD679 ・DARLINGTON ・High DC current gain APPLICATIONS ・For use as output devices in complementary general–purpose amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD676/BD678/BD680 ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD676 VCBO Collector-base voltage BD678 BD680 BD676 VCEO Collector-emitter voltage BD678 BD680 VEBO IC IB PC Tj Tstg Emitter -base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -45 -60 -80 -5 -4 -0.1 40 150 -55~150 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 3.13 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD676 V(BR)CEO Collector-emitter breakdown voltage BD678 BD680 BD676 V(BR)CBO Collector-base breakdown voltage BD678 BD680 V(BR)EBO VCEsat VBE(on) ICBO ICEO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain IE=-5mA;IC=0 IC=-1.5A; IB=-30mA IC=-1.5A ; VCE=-3V VCB=rated BVCEO; IE=0 Ta=100 ℃ VCE=1/2rated BVCEO; IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-3V 750 IC=-1mA; IE=0 IC=-50mA;IB=0 CONDITIONS MIN -45 -60 -80 -45 -60 -80 -5 -2.5 -2.5 -0.2 -2.0 -0.5 -2.0 V V V mA mA mA V V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Darligton Power Transistors PACKAGE OUTLINE BD676/BD678/BD680 Fig.2 Outline dimensions 3