BD683

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD683 DESCRIPTION ・With TO-126 package ・Complement to type BD684 ・DARLINGTON APPLICATIONS ・For audio and video applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 120 5 4 6 0.1 40 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance, junction to mouting base MAX 3.12 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD683 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 ton toff PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Turn-on time Turn-off time IC=1.5A;IB1=-IB2=6mA VCC=30V CONDITIONS IC=1.5A; IB=6mA IC=1.5A ; VCE=3V VCB=120V; IE=0 VCE=60V; IB=0 VEB=5V; IC=0 IC=500mA ; VCE=3V IC=1.5A ; VCE=3V IC=4A ; VCE=3V 750 1500 0.8 4.5 2 8 μs μs 2200 MIN TYP. MAX 2.5 2.5 0.2 0.2 5 UNIT V V mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD683 Fig.2 Outline dimensions 3