BD705

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD705 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 45V(Min.) ·Complement to Type BD706 APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 45 45 45 5 12 5 75 150 -65~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.67 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD705 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 45 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 1.5 V ICEO Collector Cutoff Current VCE= 22V; IB= 0 B 1.0 0.1 1.0 1.0 mA ICBO Collector Cutoff Current VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ VEB= 5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.5A; VCE= 2V 40 400 hFE-2 DC Current Gain IC= 2A; VCE= 2V 30 hFE-3 DC Current Gain IC= 4A; VCE= 4V 20 150 hFE-4 DC Current Gain IC= 10A; VCE= 4V 5 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 3V 3 MHz isc Website：www.iscsemi.cn 2