BD706

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD706 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -45V(Min.) ·Complement to Type BD705 APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -45 -45 -45 -5 -12 -5 75 150 -65~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.67 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD706 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -45 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -4V -1.5 V ICEO Collector Cutoff Current VCE= -22V; IB= 0 B -1.0 -0.1 -1.0 -1.0 mA ICBO Collector Cutoff Current VCB= -45V; IE= 0 VCB= -45V; IE= 0; TC= 150℃ VEB= -5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= -0.5A; VCE= -2V 40 400 hFE-2 DC Current Gain IC= -2A; VCE= -2V 30 hFE-3 DC Current Gain IC= -4A; VCE= -4V 20 150 hFE-4 DC Current Gain IC= -10A; VCE= -4V 5 fT Current-Gain—Bandwidth Product IC= -0.3A; VCE= -3V 3 MHz isc Website：www.iscsemi.cn 2