BD708

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD707/709/711 APPLICATIONS ・Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD708 BD710 BD712 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BD708 VCBO Collector-base voltage BD710 BD712 BD708 VCEO Collector-emitter voltage BD710 BD712 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -12 -18 -5 75 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD708 BD710 BD712 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD708 VCEO(SUS) Collector-emitter sustaining voltage BD710 BD712 VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage BD708 ICBO Collector cut-off current BD710 BD712 BD708 ICEO Collector cut-off current BD710 BD712 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain only for BD708 DC current gain BD708 hFE-4 DC current gain BD710 BD712 fT Transition frequency IC=-0.3A;VCE=-3V; 3 IC=-10A ; VCE=-4V IC=-4A ,IB=-0.4A IC=-4A , VCE=-4V VCB=-60V, IE=0 TC=150℃ VCB=-80V, IE=0 TC=150℃ VCB=-100V, IE=0 TC=150℃ VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-4A ; VCE=-4V 40 30 15 5 10 8 8 MHz 150 120 -1.0 400 mA -0.1 mA IC=-0.1A, IB=0 CONDITIONS MIN -60 -80 -100 -1.0 -1.5 -0.1 -1.0 -0.1 -1.0 -0.1 -1.0 mA V V V TYP. MAX UNIT 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD708 BD710 BD712 Fig.2 Outline dimensions 3