BD709

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS ・Intented for use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD707 BD709 BD711 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BD707 VCBO Collector-base voltage BD709 BD711 BD707 VCEO Collector-emitter voltage BD709 BD711 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Total dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 V 60 80 100 5 12 18 5 75 150 -65~150 V A A A W ℃ ℃ UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD707 VCEO(SUS) Collector-emitter sustaining voltage BD709 BD711 VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage BD707 ICBO Collector cut-off current BD709 BD711 BD707 ICEO Collector cut-off current BD709 BD711 IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain only for BD707/709 DC current gain BD707 hFE-4 DC current gain BD709 BD711 fT Transition frequency IC=0.3A;VCE=3V; 3 IC=10A ; VCE=4V IC=4A ,IB=0.4A IC=4A , VCE=4V VCB=60V, IE=0 TC=150℃ VCB=80V, IE=0 TC=150℃ VCB=100V, IE=0 TC=150℃ VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=2A ; VCE=2V IC=4A ; VCE=2V 40 30 15 5 10 8 8 MHz 150 120 1.0 400 mA 0.1 mA IC=0.1A, IB=0 CONDITIONS MIN 60 80 100 1.0 1.5 0.1 1.0 0.1 1.0 0.1 1.0 V V V TYP. MAX UNIT mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD707 BD709 BD711 Fig.2 Outline dimensions 3