BD724

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD724 DESCRIPTION ·DC Current Gain: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -100V(Min) ·Complement to type BD723 APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -100 -100 -5 -4 -7 -1 30 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.5 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD724 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V -1.4 V μA VCB= -100V; IE= 0 ICBO Collector Cutoff Current VCB= -50V; IE= 0; TC= 150℃ -50 -1 mA ICEO Collector Cutoff Current VCE= -50V; IB= 0 B -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.2 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 40 hFE-2 DC Current Gain IC= -2A; VCE= -4V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 3 MHz Switching Times μs μs ton Turn-On time IC= -1A; IB1= -IB2= -0.1A; VCC= -20V 0.1 toff Turn-Off time 0.4 isc Website：www.iscsemi.cn 2