BD725

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD725 DESCRIPTION ·DC Current Gain: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to type BD726 APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 120 120 5 4 7 1 30 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.5 100 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD725 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.4 V μA VCB= 120V; IE= 0 ICBO Collector Cutoff Current VCB= 60V; IE= 0; TC= 150℃ 50 1 mA ICEO Collector Cutoff Current VCE= 60V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 2A; VCE= 4V 20 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 4V 3 MHz Switching Times μs μs ton Turn-On time IC= 1A; IB1= -IB2= 0.1A;VCC= 20V 0.3 toff Turn-Off time 1.5 isc Website：www.iscsemi.cn 2