BD735

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD735 DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 35V(Min.) ·Complement to Type BD736 APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ VALUE 35 35 5 4 7 1 2 UNIT V V V A A A PC Collector Power Dissipation @ TC=25℃ TJ Tstg Junction Temperature Storage Temperature Range 40 150 -55~150 W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD735 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 35 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 35 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.6 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V 1.1 V ICES Collector Cutoff Current VCE= 35V; VBE= 0 0.2 mA hFE-1 DC Current Gain IC= 20mA; VCE= 4V 40 hFE-2 DC Current Gain IC= 2A; VCE= 1V 40 isc Website：www.iscsemi.cn 2