BD743A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD744/A/B/C ・High current capability ・High power dissipation APPLICATIONS ・For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD743/A/B/C ・ Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD743 BD743A VCBO Collector-base voltage BD743B BD743C BD743 BD743A VCEO Collector-emitter voltage BD743B BD743C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ Collector power dissipation Ta=25℃ Junction temperature Storage temperature 2 150 -65~150 ℃ ℃ Open collector Open base 80 100 5 15 20 5 90 W V A A A Open emitter 90 110 45 60 V CONDITIONS VALUE 50 70 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD743 Collector-emitter breakdown voltage BD743A IC=30mA; IB=0 BD743B BD743C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD743/A ICEO Collector cut-off current BD743B/C BD743 BD743A ICBO Collector cut-off current BD743B BD743C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125℃ VCE=70V; VBE=0 TC=125℃ VCE=90V; VBE=0 TC=125℃ VCE=110V; VBE=0 TC=125℃ VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=15A ; VCE=4V 40 20 5 IC=5 A;IB=0.5 A IC=15 A;IB=5 A IC=5A ; VCE=4V IC=15A ; VCE=4V VCE=30V; IB=0 80 100 CONDITIONS MIN 45 60 BD743/A/B/C TYP. MAX UNIT V(BR)CEO V 1.0 3.0 1.0 3.0 V V V V 0.1 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.5 mA mA mA 150 Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6Ω tp=20μs 0.02 0.35 0.5 0.4 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 1.40 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD743/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3