BD743C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD743C DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·Collector Power Dissipation: PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD744C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 110 100 5 15 20 5 2 UNIT V V V A A A PC W 90 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.4 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on)-1 VBE(on)-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage CONDITIONS IC= 30mA; IB= 0 IC= 5A; IB= 0.5A B BD743C MIN 100 MAX UNIT V 1.0 3.0 1.0 3.0 0.1 V V V V IC= 15A; IB= 5A IC= 5A ; VCE= 4V IC= 15A ; VCE= 4V VCB= 110V; IE= 0 ICBO Collector Cutoff Current VCB= 110V; IE= 0; TC= 125℃ 5.0 0.1 0.5 40 20 5 150 mA ICEO IEBO hFE-1 hFE-2 hFE-3 Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain VCE= 60V; IB= 0 B mA mA VEB= 5V; IC= 0 IC= 1A ; VCE= 4V IC= 5A ; VCE= 4V IC= 15A ; VCE= 4V Switching Times td tr ts tf Delay Time Rise Time IC= 5A; IB1= -IB2= 0.5A; Storage Time Fall time 500 400 ns ns 20 350 ns ns isc Website：www.iscsemi.cn 2