BD744B

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD744B DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Collector Power Dissipation: PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD743B APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -90 -80 -5 -15 -20 -5 2 UNIT V V V A A A PC W 90 150 -65~150 ℃ ℃ TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.4 62.5 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on)-1 VBE(on)-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage CONDITIONS IC= -30mA; IB= 0 IC= -5A; IB= -0.5A B BD744B MIN -80 MAX UNIT V -1.0 -3.0 -1.0 -3.0 -0.1 V V V V IC= -15A; IB= -5A IC= -5A ; VCE= -4V IC= -15A ; VCE= -4V VCB= -90V; IE= 0 ICBO Collector Cutoff Current VCB= -90V; IE= 0; TC= 125℃ -5.0 -0.1 -0.5 40 20 5 150 mA ICEO IEBO hFE-1 hFE-2 hFE-3 Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain VCE= -60V; IB= 0 B mA mA VEB= -5V; IC= 0 IC= -1A ; VCE= -4V IC= -5A ; VCE= -4V IC= -15A ; VCE= -4V Switching Times td tr ts tf Delay Time Rise Time Storage Time Fall time 20 120 600 300 ns ns ns ns IC= -5A; IB1= -IB2= -5A; VBE(off)= 4.2V; RL= 6Ω; tp= 20μs,DutyCycle≤ 2% isc Website：www.iscsemi.cn 2