BD745C

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD746/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD745/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD745 BD745A VCBO Collector-base voltage BD745B BD745C BD745 BD745A VCEO Collector-emitter voltage BD745B BD745C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ Collector power dissipation Ta=25℃ Junction temperature Storage temperature 3.5 150 -65~150 ℃ ℃ Open collector Open base 80 100 5 20 25 7 115 W V A A A Open emitter 90 110 45 60 V CONDITIONS VALUE 50 70 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD745 Collector-emitter breakdown voltage BD745A IC=30mA; IB=0 BD745B BD745C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD745/A ICEO Collector cut-off current BD745B/C BD745 BD745A ICBO Collector cut-off current BD745B BD745C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=60V; IB=0 VCE=50V; VBE=0 TC=125℃ VCE=70V; VBE=0 TC=125℃ VCE=90V; VBE=0 TC=125℃ VCE=110V; VBE=0 TC=125℃ VEB=5V; IC=0 IC=1A ; VCE=4V IC=5A ; VCE=4V IC=20A ; VCE=4V 40 20 5 IC=5 A;IB=0.5 A IC=20 A;IB=5 A IC=5A ; VCE=4V IC=20A ; VCE=4V VCE=30V; IB=0 80 100 CONDITIONS MIN 45 60 BD745/A/B/C TYP. MAX UNIT V(BR)CEO V 1.0 3.0 1.0 3.0 V V V V 0.1 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.5 mA mA mA 150 Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6Ω tp=20μs 0.02 0.35 0.5 0.4 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD745/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3