BD746C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD746/A/B/C · Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER BD746 BD746A VCBO Collector-base voltage BD746B BD746C BD746 BD746A VCEO Collector-emitter voltage BD746B BD746C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ Collector power dissipation Ta=25℃ Junction temperature Storage temperature 3.5 150 -65~150 ℃ ℃ Open collector Open base -80 -100 -5 -20 -25 -7 115 W V A A A Open emitter -90 -110 -45 -60 V CONDITIONS VALUE -50 -70 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD746 Collector-emitter breakdown voltage BD746A IC=-30mA; IB=0 BD746B BD746C VCEsat-1 VCEsat-2 VBE -1 VBE -2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD746/A ICEO Collector cut-off current BD746B/C BD746 BD746A ICBO Collector cut-off current BD746B BD746C IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain VCE=-60V; IB=0 VCE=-50V; VBE=0 TC=125℃ VCE=-70V; VBE=0 TC=125℃ VCE=-90V; VBE=0 TC=125℃ VCE=-110V; VBE=0 TC=125℃ VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-5A ; VCE=-4V IC=-20A ; VCE=-4V 40 20 5 IC=-5 A;IB=-0.5 A IC=-20 A;IB=-5 A IC=-5A ; VCE=-4V IC=-20A ; VCE=-4V VCE=-30V; IB=0 -80 -100 CONDITIONS MIN -45 -60 BD746/A/B/C TYP. MAX UNIT V(BR)CEO V -1.0 -3.0 -1.0 -3.0 V V V V -0.1 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.5 mA mA mA 150 Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=-5 A;IB1=-IB2=-0.5 A VBE(off)=4.2V; RL=6Ω tp=20μs 0.02 0.12 0.6 0.3 μs μs μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD746/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3