BD750A

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A ·High Power Dissipation ·Complement to Type BD751/751A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD750 VCEV Collector-Emitter Voltage BD750A BD750 VCEO(SUS) Collector-Emitter Voltage BD750A VEBO IC IB B VALUE -100 UNIT V -130 -90 V -120 -7 -20 -5 200 200 -65~200 V A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD750 IC= -100mA ; IB= 0 BD750A BD750 BD750A BD750 BD750A BD750 BD750A IEBO Emitter Cutoff Current BD750 hFE DC Current Gain BD750A fT Current-Gain—Bandwidth Product IC= -5A ; VCE= -2V IC= -0.5A ;VCE= -10V; ftest= 1MHz 25 4 IC= -7.5A; IB= -0.75A B BD750/750A CONDITIONS MIN -90 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V -120 -1.5 V -1.0 -1.8 V -1.8 -0.5 mA -0.5 -1.0 15 60 100 MHz mA VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= -0.75A B IC= -5A; IB= -0.5A B ICEV Collector Cutoff Current VCEV= -100V;VBE(off)= -1.5V VCEV= -130V;VBE(off)= -1.5V VEB= -7V; IC=0 IC= -7.5A ; VCE= -2V isc Website：www.iscsemi.cn 2