BD751

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A ·High Power Dissipation ·Complement to Type BD750/750A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD751 VCEV Collector-Emitter Voltage BD751A BD751 VCEO(SUS) Collector-Emitter Voltage BD751A VEBO IC IB B VALUE 100 UNIT V 130 90 V 120 7 20 5 200 200 -65~200 V A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD751 IC=100mA ; IB=0 BD751A BD751 BD751A BD751 BD751A BD751 BD751A IEBO Emitter Cutoff Current BD751 hFE DC Current Gain BD751A fT Current-Gain—Bandwidth Product IC= 5A ; VCE= 2V IC= 0.5A ;VCE= 10V; ftest= 1MHz 25 4 IC= 7.5A; IB= 0.75A IC= 5A; IB= 0.5A B BD751/751A CONDITIONS MIN 90 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 120 1.5 V 1.0 1.8 V 1.8 0.5 mA 0.5 1.0 15 60 100 MHz mA VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A IC= 5A; IB= 0.5A B ICEV Collector Cutoff Current VCEV= 100V;VBE(off)= 1.5V VCEV= 130V;VBE(off)= 1.5V VEB= 7V; IC=0 IC= 7.5A ; VCE= 2V isc Website：www.iscsemi.cn 2