BD751C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER BD751B VCEV Collector-Emitter Voltage BD751C BD751B VCEO(SUS) Collector-Emitter Voltage BD751C VEBO IC IB B VALUE 110 UNIT V 140 100 V 130 7 20 5 250 200 -65~200 V A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD751B IC=100mA ; IB=0 BD751C BD751B BD751C BD751B BD751C BD751B BD751C IEBO Emitter Cutoff Current BD751B hFE DC Current Gain BD751C fT Current-Gain—Bandwidth Product IC= 5A ; VCE= 2V IC= 0.5A ;VCE= 10V; ftest= 1MHz IC= 7.5A; IB= 0.75A IC= 5A; IB= 0.5A B BD751B/751C CONDITIONS MIN 100 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 130 1.5 V 1.0 1.8 V 1.8 0.5 mA 0.5 1.0 15 25 4 60 100 MHz mA VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A IC= 5A; IB= 0.5A B ICEV Collector Cutoff Current VCEV= 110V;VBE(off)= 1.5V VCEV= 140V;VBE(off)= 1.5V VEB= 7V; IC=0 IC= 7.5A ; VCE= 2V isc Website：www.iscsemi.cn 2