BD788

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD788 DESCRIPTION ·DC Current Gain: hFE= 40~250(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= -60V(Min) ·Complement to type BD787 APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -80 -60 -6 -4 -8 -1 15 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 8.34 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BD788 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA B -0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A B -0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.8A B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= 0.2A B -2.0 V VBE(on) ICEX Base-Emitter On Voltage IC= -2A; VCE= -3V VCB= -80V;VBE(off)= -1.5V VCB= -40V;VBE(off)= -1.5V;TC=125℃ VCE= -30V; IB= 0 B -1.8 -1.0 -0.1 -0.1 V μA mA mA μA Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 hFE-1 DC Current Gain IC= -0.2A; VCE= -3V 40 250 hFE-2 DC Current Gain IC= -1A; VCE= -3V 25 hFE-3 DC Current Gain IC= -2A; VCE= -3V 20 hFE-4 DC Current Gain IC= -4A; VCE= -3V 5 fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -10V 50 MHz COB Collector Output Capacitance IE= 0; VCB= -10V; f= 0.1MHz 70 pF isc Website：www.iscsemi.cn 2