BD799

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD799 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 80V(Min) ·Low Saturation Voltage ·Complement to Type BD800 APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation TC=25℃ Junction Temperature Storage Ttemperature Range VALUE 80 80 5 8 3 65 150 -55~150 UNIT V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.92 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 100mA; IB= 0 IC= 3A; IB= 0.3A B BD799 MIN 80 TYP. MAX UNIT V 1 1.6 0.1 1 30 15 3 V V mA mA IC= 3A ; VCE= 2V VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 1A ; VCE= 2V IC= 3A ; VCE= 2V IC= 0.25A ;VCE= 10V,ftest= 1MHz MHz isc Website：www.iscsemi.cn