BD808

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD808 DESCRIPTION ·DC Current Gain : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·Complement to Type BD807 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE -70 -60 -5 -10 -6 90 150 -55~150 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.39 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD808 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ;IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.1 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -70V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -2A ; VCE= -2V 30 hFE-2 DC Current Gain IC= -4A ; VCE= -2V 15 fT Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V; ftest= 1.0MHz 1.5 MHz isc Website：www.iscsemi.cn 2