BD809

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD810 ・DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ・Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD809 ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 10 6 90 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.39 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD809 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IC=3 A;IB=0.3 A IC=4A ; VCE=2V VCB=80V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V IC=1A ; VCE=10V;f=1.0MHz 30 15 1.5 MHz MIN 80 1.1 1.6 1.0 2.0 TYP. MAX UNIT V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD809 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3