BD810

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD809 ・DC current gain : hFE = 30 (Min) @ IC = 2.0 Adc APPLICATIONS ・Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD810 ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -10 -6 90 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.39 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD810 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A; IB=0 IC=-3 A;IB=-0.3 A IC=-4A ; VCE=-2V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-10V;f=1.0MHz 30 15 1.5 MHz MIN -80 -1.1 -1.6 -1.0 -2.0 TYP. MAX UNIT V V V mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD810 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3