BD897

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD896/898/900/902 ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD895/897/899/901 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BD895 BD897 VCBO Collector-base voltage BD899 BD901 BD895 BD897 VCEO Collector-emitter voltage BD899 BD901 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current-DC Base current TC=25℃ Total power dissipation Ta=25℃ Junction temperature Storage temperature 2 150 -65~150 ℃ ℃ Open collector Open base 80 100 5 8 300 70 W V A mA Open emitter 80 100 45 60 V CONDITIONS VALUE 45 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD895 BD897 IC=100mA, IB=0 BD899 BD901 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD895 BD897 ICEO Collector cut-off current BD899 BD901 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time VCE=40V, IB=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IE=8A IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs IC=3A ,IB=12mA IC=3A ; VCE=3V VCB=45V, IE=0 TC=100℃ VCB=60V, IE=0 TC=100℃ VCB=80V, IE=0 TC=100℃ VCB=100V, IE=0 TC=100℃ VCE=30V, IB=0 VCE=30V, IB=0 CONDITIONS BD895/897/899/901 MIN 45 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 100 2.5 2.5 0.2 2.0 0.2 2.0 0.2 2.0 0.2 2.0 V V mA 0.5 mA 2 750 3.5 1 5 mA V μs μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD895/897/899/901 Fig.2 Outline dimensions 3