BD899A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type BD896A/898A/900A ・DARLINGTON APPLICATIONS ・For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD895A/897A/899A Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER BD895A VCBO Collector-base voltage BD897A BD899A BD895A VCEO Collector-emitter voltage BD897A BD899A VEBO IC IB Emitter-base voltage Collector current-DC Base current TC=25℃ PT Total power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -65~150 ℃ ℃ Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 8 300 70 W V A mA V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BD895A V(BR)CEO Collector-emitter breakdown voltage BD897A BD899A VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD895A ICBO Collector cut-off current BD897A BD899A BD895A ICEO Collector cut-off current BD897A BD899A IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time IC=4A ,IB=16mA IC=4A ; VCE=3V VCB=45V, IE=0 TC=100℃ VCB=60V, IE=0 TC=100℃ VCB=80V, IE=0 TC=100℃ VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VEB=5V; IC=0 IC=4A ; VCE=3V IE=8A IC=100mA, IB=0 CONDITIONS BD895A/897A/899A MIN 45 60 80 TYP. MAX UNIT V 2.8 2.5 0.2 2.0 0.2 2.0 0.2 2.0 V V mA 0.5 mA 2 750 3.5 1 5 mA V μs μs IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10Ω;tp=20μs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT ℃/W 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD895A/897A/899A Fig.2 Outline dimensions 3